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| geometry process details principal device types cmpt918 2n918 2n2857 2n5179 2n5770 bfy90 pn3563 pn3564 gross die per 4 inch wafer 53,788 process CP317V small signal transistor npn - rf transistor chip process epitaxial planar die size 14.5 x 14.5 mils die thickness 7.1 mils base bonding pad area 2.4 x 2.2 mils emitter bonding pad area 2.4 x 2.2 mils top side metalization al - 30,000? back side metalization au - 18,000? www.centralsemi.com r0 (30-august 2011)
process CP317V typical electrical characteristics www.centralsemi.com r0 (30-august 2011) |
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